JPS6114182Y2 - - Google Patents
Info
- Publication number
- JPS6114182Y2 JPS6114182Y2 JP2568881U JP2568881U JPS6114182Y2 JP S6114182 Y2 JPS6114182 Y2 JP S6114182Y2 JP 2568881 U JP2568881 U JP 2568881U JP 2568881 U JP2568881 U JP 2568881U JP S6114182 Y2 JPS6114182 Y2 JP S6114182Y2
- Authority
- JP
- Japan
- Prior art keywords
- matching circuit
- ultra
- width
- impedance
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 101710187785 60S ribosomal protein L1-A Proteins 0.000 description 1
- 101710187786 60S ribosomal protein L1-B Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2568881U JPS6114182Y2 (en]) | 1981-02-25 | 1981-02-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2568881U JPS6114182Y2 (en]) | 1981-02-25 | 1981-02-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57138421U JPS57138421U (en]) | 1982-08-30 |
| JPS6114182Y2 true JPS6114182Y2 (en]) | 1986-05-02 |
Family
ID=29823383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2568881U Expired JPS6114182Y2 (en]) | 1981-02-25 | 1981-02-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6114182Y2 (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2529778Y2 (ja) * | 1987-09-24 | 1997-03-19 | 日本電気株式会社 | マイクロ波集積回路 |
| JP3735270B2 (ja) * | 2001-05-11 | 2006-01-18 | 松下電器産業株式会社 | 高周波半導体装置 |
| JP4519637B2 (ja) * | 2004-12-28 | 2010-08-04 | 株式会社東芝 | 半導体装置 |
| JP5135376B2 (ja) * | 2010-04-02 | 2013-02-06 | 株式会社東芝 | 半導体装置 |
-
1981
- 1981-02-25 JP JP2568881U patent/JPS6114182Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57138421U (en]) | 1982-08-30 |
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